AM3829P these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds( on) (ohm) i d (a) 0.130 @ v gs = -4.5v 2.5 0.190 @ v gs = -2.5v 1.9 -20 mosfet product summary ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe tsop-6 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol typ max t <= 10 sec 93 110 steady state 130 150 thermal resistance ratings maximum junction-to-ambient a o c/w r thja parameter v f (v) diode forward voltage 20 0.48v @ 1.0a 1.0 schottky product summary v ka (v) i f (a) symbol maximum units v ds -20 v ka 20 v gs 8 t a =25 o c2.5 t a =70 o c1.9 i dm 10 i s -1.6 i f 0.5 i fm 8 t a =25 o c1.15 t a =70 o c0.7 t a =25 o c1.0 t a =70 o c0.6 t j , t stg -55 to 150 o c maximum power dissipation (schottky) a operating junction and storage temperature range p d w absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current (mosfet) b gate-source voltage (mosfet) reverse voltage (schottky) continuous drain current (t j =150 o c) (mosfet) a i d a drain-source voltage (mosfet) continuous source current (mosfet diode conduction) a average forward current (schottky) maximum power dissipation (mosfet) a pulsed forward current (schottky) v s d g p-channel mosfet k a tsop-6 top view 1 2 34 k n/c d 6 5 g a s product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing . min typ max i f = 0.5 a 0.48 v i f = 0.5 a, t j = 125 o c 0.4 v v r = 30 v 0.1 v r = 30 v, t j = 75 o c 1 v r = 30 v, t j = 125 o c 10 junction capacitance c t v r = 10 v 31 pf forward voltage drop v f schottky specifications (t a = 25 o c unless otherwise noted) ma i rm maximum reverse leakage current test conditions symbol parameter limits unit min typ max gate-threshold voltage v gs(t h) v ds = v gs , i d = -250 ua -0.4 gate-body leakage i gss v ds = 0 v, v gs = +/-8 v 100 na v ds = -16 v, v gs = 0 v -1 v ds = -16 v, v gs = 0 v, t j = 55 o c -10 on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -5 a v gs = -4.5 v, i d = -2.5 a 0.130 v gs = -2.5 v, i d = -1.9 a 0.190 forward tranconductance a g fs v ds = -5 v, i d = -2.5 a 3 s diode forward voltage v sd i s = -1.6 a, v gs = 0 v -0.70 v total gate charge q g 6.0 gate-source charge q gs 0.80 gate-drain charge q gd 1.30 turn-on delay time t d(on) 6.5 ri s e ti me t r 20 turn-off delay time t d(of f ) 31 fall-time t f 21 v dd = -5 v, r l = 5 ohm, v gen = -4.5 v, r g = 6 ohm ns drain-source on-state resistance a dynamic b v ds = -5 v, v gs = -4.5 v, i d = -2.5 a nc ? r ds(on) mosfet specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol parameter lim its unit AM3829P product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
